H01 - GaN Devices

Tuesday, 31 May 2022: 14:10-17:20
West Meeting Room 111 (Vancouver Convention Center)
Chairs:
Kazunobu Kojima and Songrui Zhao
14:10
1307
(Invited) Breakthrough Avalanche and Short Circuit Robustness in Vertical GaN Power Devices
Y. Zhang, R. Zhang, Q. Song, and Q. Li (Virginia Polytechnic Institute and State University)
14:40
1308
(Invited) Breakdown Improvement and Reverse Recovery Characterization in Vertical GaN PN Diodes
R. Khanna (University of Toledo)
15:10
1309
Impact of Substrate Defects on Vertical GaN Device Leakage Behavior
Y. Wang, M. E. Liao, K. Huynh (University of California, Los Angeles), W. Olsen (University of California Los Angeles), J. C. Gallagher, T. J. Anderson (Naval Research Laboratory), X. Huang, M. Wojcik (Argonne National Lab), and M. S. Goorsky (University of California, Los Angeles)
15:30
1310
Using Data Science and Machine Learning to Predict the Failure Rate of Pin Diodes
J. C. Gallagher, M. Mastro, A. Koehler (Naval Research Laboratory), M. Ebrish (NRC Postdoctoral Fellow residing at NRL), A. G. Jacobs, J. K. Hite (Naval Research Laboratory), B. P. Gunning, R. J. Kaplar (Sandia National Laboratories), K. D. Hobart, and T. J. Anderson (Naval Research Laboratory)
15:50
Break
16:00
1311
(Invited) Advancements in Vertical GaN p-n Junction Structures Via p-Type Ion Implantation
M. S. Goorsky, M. E. Liao, K. Huynh, Y. Wang (University of California, Los Angeles), T. J. Anderson (Naval Research Laboratory), J. Tweedie (Adroit Materials), and A. A. Allerman (Sandia National Laboratories)
16:30
1312
Impact of Anode Doping on Avalanche in Vertical GaN Pin Diodes with Hybrid Edge Termination Design
M. Ebrish (NRC Postdoctoral Fellow residing at NRL), A. G. Jacobs (Naval Research Laboratory), P. Pandey, T. Nelson (University of Toledo), A. Koehler (Naval Research Laboratory), J. Gallagher (Naval Research lab), R. Khanna (University of Toledo), K. D. Hobart (Naval Research Laboratory), R. J. Kaplar, B. P. Gunning (Sandia National Laboratories), and T. J. Anderson (Naval Research Laboratory)
16:50
1313
(Invited) Exploring Interfaces and Polarity to Realize Vertical III-Nitride Superjunction Devices
S. Pavlidis, D. Khachariya, D. Szymanski (North Carolina State University), P. Reddy (Adroit Materials Inc.), E. Kohn (Universitaet Ulm), Z. Sitar, and R. Collazo (North Carolina State University)
See more of: H01: Wide-Bandgap Semiconductor Materials and Devices 23
See more of: Electronic and Photonic Devices and Systems
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