H01 - Ultra-Wide Bandgap 2

Wednesday, 1 June 2022: 13:50-15:30
West Meeting Room 111 (Vancouver Convention Center)
Chairs:
Raghav Khanna and Christina DiMarino
13:50
1321
(Invited, Digital Presentation) Exploring the Potential and Limits of Gallium Oxide Electronics: In-situ Dielectrics, Heterointegration and High-k Field Plates
S. Roy, A. Bhattacharyya, and S. Krishnamoorthy (University of California, Santa Barbara)
14:20
1322
(Invited) ALD HfO2/β-Ga2O3 Reliability for Future Power Devices
H. Masten (University of Michigan), J. Phillips (University of Delaware), and B. Peterson (University of Michigan)
14:50
1323
Mechanism of Reverse Leakage Current in Schottky Diode Fabricated on Large Bandgap Semiconductors like Ga2O3 or Diamond Part II
W. S. Lau (Nanyang Technological University)
15:10
1324
Characterization of Gallium Oxide with a Novel Non-Contact Electrical Metrology, CnCV, for Wide Bandgap Semiconductors
M. Wilson, D. Marinskiy, A. Savtchouk, C. Almeida, B. Schrayer, J. D'Amico, and J. Lagowski (Semilab SDI)
See more of: H01: Wide-Bandgap Semiconductor Materials and Devices 23
See more of: Electronic and Photonic Devices and Systems
<< Previous Session | Next Session >>