D02 - Characterization and Reliability 2

Wednesday, 1 June 2022: 10:20-12:20
West Meeting Room 116 (Vancouver Convention Center)
Chairs:
Yaw Obeng , Zhi David Chen and Sunghwan Lee
10:20
1065
(Invited) Improved Reliability of 4H-SiC Metal-Oxide-Semiconductor Devices Utilising Atomic Layer Deposited Layers with Enhanced Interface Quality
A. B. B. Renz, O. J. Vavasour, P. M. Gammon, F. Li, T. Dai, G. W. C. Baker, N. E. Grant, J. D. Murphy, P. A. Mawby, V. A. Shah (University of Warwick), and J. Gott (Department of Physics, Warwick University)
11:00
1066
(Invited) Clarification of Possible Factors to Determine Flat-Band Voltage in 4H-SiC Gate Stacks with Nitrogen Passivation Processes
K. Kita (University of Tokyo)
11:40
1067
(Invited) Thin Epitaxial Single-Crystal Si on Sige Followed By in-Situ Deposition of High-k Dielectrics – Novel Gate Stacks for Achieving Extremely Low Dit and Highly Reliable SiGe MOS
H. W. Wan, Y. T. Cheng, C. K. Cheng (National Taiwan University), T. W. Pi (National Synchrotron Radiation Research Center), J. Kwo (National Tsing Hua University), and M. Hong (National Taiwan University)
See more of: D02: Dielectrics for Nanosystems 9: Materials Science, Processing, Reliability, and Manufacturing
See more of: Dielectric Science and Materials
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