Properties of heteroepitaxial thin films are often dependent on the method and conditions for deposition[1]. In that respect, the electrochemical growth represents energetically different approach as compared to conventional vacuum deposition methods. It offers unique advantages, which can be exploited to get high quality ultra-thin films. The obvious one is that process occurs at an ambient temperature, which allows growth of heteroepitaxial metal overlayers while preserving the integrity of the interface. In recent years, significant progress has been made in controlling the thin film growth modes[2]^,[3],[4]. Various approaches to manipulate growth kinetics and enhance the evolution of atomically flat epitaxial overlayers were discovered[5]^,[6],[7]. Some of these findings were successfully implemented in electrochemical epitaxial growth resulting in development of deposition protocols such as Defect Mediated Growth (DMG)[8]^,[9], Surfactant Mediated Growth (SMG)[10] and growth via Surface Limited Redox Replacement (SLRR)[11]^,[12] with its sub-derivatives such as SEBALD, ECALD, ECALE, E-less ALD. These methods are used extensively by practitioners in different areas to synthesize monolayer or nanocluster catalysts and ultra-thin films with different compositions and applications.

In this talk, we will review current perspective and progress on electrochemical epitaxial growth. Discussion will focus on fundamental and practical details of the relevant phenomena about UPD, SMG, DMG, SLRR and E-less ALD using examples and challenges that are facing researchers in these areas. If time allowed, some out of the box idea will be posted opening podium for discussion.

References

[1]. D. L. Smith, Thin-Film Deposition, McGraw-Hill, New York (1997).

[2]. Z. Zhang and M.G. Lagally, Science, 276, 377 (1997).

[3]. J. A. Venables, G. D. Spiller, M. Hanbucken, Rep. Prog. Phys., 47, 339 (1984).

[4]. A. Pimpinelli and J. Villain, Physics of Crystal Growth, p. 181, Cambridge University Press, NY (2007).

[5]. G. Rosenfeld, R. Servaty, C. Teichert, B. Poeselma and G. Comsa, Phys. Rev. Lett., 71, 895 (1993).

[6]. J. Camarero, J. Ferron, V. Cros, L.Gomez, A.L. Vazquez de Parga, J.M. Gallego, J.E. Prieto, J.J. de Miguel and R. Miranda, Phys. Rev. Lett., 81, 850 (1998).

[7]. Z. Zhang and M. G. Lagally, Phys. Rev. Lett., 72, 693 (1994).

[8]. K. Sieradzki, S.R. Brankovic and N. Dimitrov, Science, 284, 138 (1999).

[9]. S. Hwang, I. Oh and J. Kwak, J. Amer. Chem. Soc., 123, 7176 (2001).

[10]. S.R. Brankovic, N. Dimitrov and K. Sieradzki, Electrochem. Solid-State Lett., 2, 443 (1999).

[11]. S.R. Brankovic, J.X. Wang and R. R. Adzic, Surf. Sci., 474, L173 (2001).

[12]. Nikolay Dimitrov, Electrochim. Acta, 209, 599 (2016).