The use of emerging low-dimensional materials in technological applications presupposes a detailed knowledge of their chemical and physical properties. In this context ab-initio theoretical methods and simulations are playing a fundamental role.

Here I aim to show how the use of parameter-free atomistic simulations can contribute to improve the microscopic understanding of the opto-electronic properties of nanomaterials and to predict new ones. I will show how ab-initio DFT and post-DFT (GW and BSE) calculations, based on Many-Body Perturbation Theory (MBPT), provide a very useful scheme to study i) giant electronic band-gaps renormalization due to low dielectric screening and large quantum confinement ii) strong light-matter interaction iii) fine structure of strongly bound excitons. iv) the influence of electron-phonon interaction on the electronic and optical spectra, v) how doping, molecular functionalization or strain can tune their opto-electronic properties. Main focus will be on different semiconducting 2D materials discovered after graphene, but other dimensionality examples will be discussed.