Wednesday, 12 October 2022: 09:00
Room 214 (The Hilton Atlanta)
K. Nomura (University of California, San Diego)
Metal oxide-Thin-film transistor (oxide-TFT)-based inverter circuit is a critical technology for the development of next-generation cost-effective ubiquitous device applications for wearable information and healthcare technology. However, in contrast to the success of n-channel oxide-TFT that already implemented in state-of-art high-performance flat-panel-displays, the development of oxide-inverter technology, especially p-channel oxide-TFT, still remains the largest challenging in oxide-TFT technology. The absence of reliable high-performance oxide-TFT inverter is mainly attributed to the insufficient device performances of p-channel oxide-TFTs, and especially large off-current causes large device power-consumption. Therefore, developing p-channel oxide-TFT exhibiting a low off-current and sharp s-value is indispensable for low-power operational oxide-inverter circuits.
This talk discuss how we improve p-channel oxide TFT performance for oxide-TFT-based inverters. After we review the recent progress of oxide-TFT-based inverter and p-channel oxide-TFTs, we identify the current issues and the remaining challenging for oxide-inverters.
To improve the device performances of p-channel oxide-TFT such as SnO-TFT, I present an atomically-ultra-thin oxide channel technology, which offers several advantages such as effective gate control of a conductive metal oxide channel in full-carrier depletion operation mode. This is a promising to improve the devcie performances for several oxide-TFTs having a high carrier-doped oxide channel. To the end, we discuss the device characteristics for oxide-TFT-based-inverter for the ultra-thin oxide-TFT-based CMOS and NMOS inverters.
