In the past decade, halide perovskites (HPs) have shot to fame in the genre of optoelectronics and photovoltaics owing to their large absorption co-effcient, high color purity, tunable bandgap and long charge diffusion lengths. Besides these traits, HPs also possess innumerable charge transport pathways, inherent hysteresis, high charge-carrier and ionic mobilities which render them as ideal candidates for resistive random access switching memories (RRAMs). However owing to material and electrical instability associated with HP thin-film devices, the figures-of-merits (FOMs) namely retention, endurance and switching speed were not up to the state of-the-art standard until recently. In order to revolutionize HP Re-RAMs we devised a unique device structure where we replaced the thin-film architecture with vertically aligned high density HP nanowires and quantum wires embedded in a porous alumina membrane (PAM) sandwiched between metallic silver and aluminum contacts. The excellent passivation provided by the PAM imparted the requisite electrical and material stability to the environmentally delicate HPs by drastically reducing the surface diffusion pathways and thereby thwarting the moisture induced attacks. Extrapolated retention time as high as 28.3 years and measured device endurance of a million cycles were obtained. Utilizing the single crystalline HP nanowires and quantum wires and their associated high ionic and electronic mobilities, switching speed as fast as 100 ps was also obtained. These FOMs represent record values for HP RRAMs ever reported. Furthermore a 14 nm lateral size HP quantum wire RRAM cell was fabricated and a cross-bar device architecture with a unique sneaky path mitigation scheme were developed, which successfully exhibited the scalability potential of our devices. We further coupled the optoelectronic and switching behaviors and were able to obtain optical programmability among the low resistance states. Besides data storage, the HP nanowires and quantum wires were employed in developing neuromorphic devices enabled with low power and high precision computing capabilities. Specifically, we obtained robust multi-level states in two types of brain-inspired devices capable of performing analog processing tasks by using silver as the top electrode and precisely controlling the current injection in the monocrytalline switching medium and by using indium doped tin oxide as the top electrode and inducing a novel valence change mechanism in the HP nanowires triggering the gradual conductance change. All in all, our nanowire and quantum wire devices propel HP RRAMs to the state-of-the-art standard in multifarious applications concerning future data storage and neuromorphic computing.