Nowadays, the increasing demand for low power and highly efficient electronics and optoelectronics has driven the semiconductor industry to look for the alternatives of Si which is approaching its physical limit. Materials like graphene, carbon nanotube, III-V materials and so on, are the most promising candidates as the replacement of silicon. Among them, III-Sb materials, a sub-group of III-V materials, have been extensively researched due to their narrow and direct bandgap, high charge carrier mobility and high g-factor which makes them suitable for transistor, infra red detection and so on. Their nanowire counterparts have also been explored as the geometry of nanowire provide unique advantages.
One of the research directions of III-Sb nanowire is to study their ternary counterpart (III-V-Sb or III-III’-Sb) like InAsSb, GaAsSb and InGaSb. Compares with binary compounds, ternary compound provides more room for engineering freedom like lattice parameter engineering and bandgap tuning. In this presentation, the synthesis and the electronic and optoelectronic applications of ternary III-Sb nanowires will be introduced. The high-crystal quality and high-aspect ratio ternary III-Sb nanowires were synthesized by using solid-source chemical vapor deposition method. Composition tunability was demonstrated successfully by adjusting the precursor ratio which allowed us to control the physical properties. We further integrated these nanowires into transistors and photodetectors which exhibit good performance like high carrier mobility and good photoresponse.