Wednesday, 12 October 2022: 15:20
Room 209 (The Hilton Atlanta)
T. Y. Yang (National Tsing Hua University Materials Science and Engineering) and Y. L. Chueh (National Tsing Hua University)
Two-dimensional (2D) nanomaterials, such as graphene and hexagonal boron nitride (hBN), have recently attracted increasing attention of researchers due to their unique phonon and electronic structures. These nanomaterials have been widely used in applications, such as sensors, catalysts, and optoelectronic devices, due to the lack of interlayer bonds and the quantum confinement of electrons. There have been several well studied methods to synthesis 2D materials including chemical vapor deposition(CVD), physical vapor deposition(PVD), liquid exfoliation, Li-intercalation exfoliation, wet chemistry, ultrasonic-ball milling, Among them, CVD is the most famous method to fabricate electronic device with high quality materials characteristic. However, CVD processes will cause extremely harsh heat budget to substrate during high temperature process. Recently, researchers have established transfer method fabricating device on other undamaged substrate. It is the trickiest problem make it cannot apply to industry.
In this research, we built an indirect laser projection transfer method. First, we sputter requiring material on Si wafer as donor chip. Followed, placed the donor chip upside down on acceptor substrate, and radiated by laser on the donor chip backside. The deposited component on donor substrate would evaporate, and the vapor would fill between two substrates interspacing. Then, the vapor will recrystallize on the cooler acceptor surface. We have successfully transferred low melting temperature 2D materials such as SnSex, NiSex, SbSex on different acceptor substrate, even on flexible and flammable paper. By controlling laser intensity and irradiation time, we can control the amount of Se scattering, finally manipulate SnSe/SnSe2 phase ratio successfully. The mechanism has been demonstrated by SEM, RAMAN, TEM, XPS, XRD. Owing to indirection irradation, it can transfer materials on several fragile substrates without any heat budget, which reveals the great potential of this method for electronics applications. In this report we successfully demonstrate transferred SnSe/SnSe2 have good feasibility in energy storage system and sensor device.
