Dye-sensitized solar cells (DSSCs) are promising photovoltaic devices and research was done in enhancing their efficiency so that they could be the potential alternatives to the p-n junction devices. Metal–organic frameworks (MOF) with porphyrin linkers as the photosensitizer have demonstrated their potential in preventing the aggregation of the dye over the transparent electrode surface. We aim to achieve the suppression of dark current by modifying the interface between the electrode and the photosensitizing film so that the efficiency can be further enhanced. To achieve this, we utilized the layer-by-layer growth method aiming for the control of the very layer(s) in between the indium tin oxide(ITO) electrode and the MOF layers. A change in the dark current produced by ITO/Insulation-layer/MOF system can be observed.