Metal-oxide (MO) semiconductor-based gas sensors such as SnO2 and ZnO, have traditionally been the common materials of choice to be used for gas detection based on the mechanism of chemosensitivity. They are some of the most economic and efficient gas sensing materials, and they show a relatively quick response to several volatile organic compounds (VOCs). Doping of the MO nano surface lattices with noble and transition metals has been shown to further enhance their gas-sensing performance by improving the catalytic properties of the MO, ameliorating their response kinetics and selectivity toward a particular gas. However, the chemosensitivity method requires electrical contacts to the MO sensor material connecting the electrical circuits to detect electrical changes of the MO in response to volatile analytes. This approach introduces inherent errors into the measurements due to the need to make physical electrical contacts with the sensing MO semiconductor surface. In this talk, I will discuss the use of a microwaves-based detection technique known as Broadband dielectric spectroscopy (BDS) to rapidly interrogate a dynamic range of material characteristics such as polarizability, phase, electrical conductivity, etc. This technique eliminates the introduction of parasitic measurement errors which come about due to electrical contacts. Specifically, we show that the microwave signal propagation characteristics (i.e., S-parameters) induces chemical changes which allow us to characterize the detection of VOCs using ZnO doped with a selection of noble and transition metals as the sensing material, at temperatures under 100 °C.