D01 - Novel Materials and Processing

Tuesday, 11 October 2022: 08:30-09:50
Room 310 (The Hilton Atlanta)
Chairs:
Fei Qin and Durga Misra
08:30
Molten Salt Method for Synthesizing Inorganic Nanomaterials
Y. Mao (Illinois Institute of Technology)
08:50
Effect of Oxide Thickness by Metallic Residue during Radical Oxidation Using Vertical Batch-Type Furnace Equipment on 300-Mm-Diameter Silicon Substrates
I. Lee and I. Lee (Sungkyunkwan univ)
09:10
Molecular Beam Epitaxy of in2Se3 Thin Films
C. A. Voigt (Georgia Institute of Technology), B. K. Wagner (Georgia Tech Research Institute), and E. M. Vogel (Georgia Institute of Technology)
09:30
Nitrogen Annealing As a Sustainable Method for Interface Trap Passivation in 4H-SiC Mosfets
S. Das (Auburn University), H. Gu (Rutgers University), L. Wang, A. Ahyi (Auburn University), L. C. Feldman (Rutgers University), M. Kuroda, and S. Dhar (Auburn University)
See more of: D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 19
See more of: Dielectric Science and Materials
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