H01 - GaAs and Related Materials

Monday, 10 October 2022: 13:30-14:50
Room 213 (The Hilton Atlanta)
Chairs:
Samuel G Carter and Shengxi Huang
13:30
(Invited) Molecular Beam Epitaxy and Dislocation Dynamics of Metamorphic Inassb for Long-Wavelength Infrared Applications
S. Tomasulo (U.S. Naval Research Laboratory), C. A. Affouda (Formerly U.S. Naval Research Laboratory), J. A. Nolde, M. E. Twigg (U.S. Naval Research Laboratory), M. K. Yakes (Formerly U.S. Naval Research Laboratory), and E. H. Aifer (U.S. Naval Research Laboratory)
14:00
(Invited) Achieving High-Power Single-Mode Operation in Vertical-Cavity Surface-Emitting Lasers Via Scalable, Higher-Order Mode Suppression Techniques
J. M. Dallesasse, P. Su, K. P. Pikul, L. Espenhahn, and M. Kraman (University of Illinois at Urbana-Champaign)
14:30
Characterization of ALD Ta2O5, Al2O3, and Ta2O5/Al2O3 Nanolaminate as Metal-Insulator-Metal Capacitor Dielectric for GaAs HBT Technology
J. Yota (Skyworks Solutions, Inc.)
See more of: H01: State-of-the-Art Program on Compound Semiconductors 65 (SOTAPOCS 65)
See more of: Electronic and Photonic Devices and Systems
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