H02 - Advanced Processes

Tuesday, 11 October 2022: 14:00-17:40
Room 214 (The Hilton Atlanta)
Chairs:
Damien Thuau and Aimin Song
14:00
(Invited) Ion Implantation for Amorphous-Ingazno Sheet Resistance Control Technique
T. Ui, K. Yasuta, Y. Yamane, and J. Tatemichi (Nissin Ion Equipment Co., Ltd.)
14:30
(Invited) Hydrogenated Polycrystalline In2O3 (In2O3:H) Thin-Film Transistor with High Mobility Exceeding 100 cm2V−1s−1 Via Solid-Phase Crystallization
Y. Magari (Shimane University), T. Kataoka (Kochi University of Technology), W. Yeh (Shimane University), and M. Furuta (Kochi University of Technology)
15:00
High Performance Back-Channel-Etch Igzo TFT with Self-Passivate HfO2 By Backside Exposure Technology
T. C. Chiang, Z. H. Li, P. T. Liu (National Yang Ming Chiao Tung University), and Y. Kuo (Texas A&M University)
15:20
Intermission
15:50
(Invited) High Performance Fully Solution Processed Transistors Towards Flexible Sustainable Electronics
J. P. Bermundo (Nara Institute of Science and Technology), D. Corsino (Free University of Bozen-Bolzano, Nara Institute of Science and Technology), U. Hanifah, and Y. Uraoka (Nara Institute of Science and Technology)
16:20
Performance Enhancement of Solution-Processed Si-Sn-O Thin-Film Transistors Using Solution Combustion Synthesis
C. G. P. Quino, J. P. Bermundo, M. Uenuma, and Y. Uraoka (Nara Institute of Science and Technology)
16:40
Electrical Performance Enhancement of Fully Solution-Processed Amorphous Indium Zinc Oxide Thin-Film Transistor Via Argon Plasma Treatment
U. Hanifah, J. P. Bermundo, M. Uenuma, and Y. Uraoka (Nara Institute of Science and Technology)
17:00
Process Development of Amorphous Indium Tin Gallium Oxide (ITGO) Thin Film Transistors
E. Powell (Rochester Institute of Technology), B. Zhu (Corning Research and Development Corporation), M. S. Kabir (Rochester Institute of Technology), R. G. Manley (Corning Incorporated), and K. D. Hirschman (Rochester Institute of Technology)
17:20