This symposium will focus on the science of advanced materials, processing, devices, architectures, and applications required to enhance the performance of silicon compatible CMOS and post-CMOS technology. Topics of particular focus will relate to analog and digital integrated circuits, non-volatile memory, neuromorphic, spin and quantum technology. Special interest relates to nanostructures and materials to further enable new functionalities thereby augmenting the current computing and hardware paradigm.
Topics of interest include:
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(1) Materials and processes needed to realize advanced devices for increased performance, while reducing power consumption and cost-of-ownership. Examples of devices
include FinFET, ultrathin body SOI, nanowires, nanosheets, Gate-All-Around devices, among others that can be synthesized on large area silicon wafers by epitaxial or other innovative methods. Negative capacitance devices based on binary or ternary oxides, ferroelectric materials and similar processes integrated on silicon are also invited. Synthesis of the new materials as well as unit processes that are essential for the realization of successful device structures are of particular interest, specifically if, augmented by novel thin-film deposition (ALD/CVD), dry etch (RIE/ALE) and wet processing techniques. Topics of interest also include high-performance gate stacks, high mobility channel materials, strain engineering, low-resistivity contacts, source/drain epitaxy for strain, junction formation, low-k dielectrics, and interconnect technology among others. Process technology contributions describing challenges to fabricate the above advanced structures for applications ranging from high-frequency 5G, artificial intelligence, smart home and other high-frequency and high-bandwidth applications are also welcome.
(2) Materials, processes, devices, and technology for optical, laser, RF, and other nonconventional nanoelectronics devices. This includes advanced power electronics devices, for example, including innovation in SiC and GaN technologies, micro-LED devices, and high-frequency RF devices based on non-Si technologies. Monolithic integration in Si and group-IV alloys, InP and GaAs based photonic devices in Si, optical interconnect technology, other optical devices on silicon (lasers, LEDs, detectors amplifiers, etc.) are also invited.
(3) Materials, processes, devices, and technology for enabling neuromorphic, spin and quantum devices. Novel non-volatile memory elements, materials, and devices for neuromorphic computing – Examples include MRAM, RRAM, ferroelectric RAM, and phase change memory, among others. Enhancing technologies such as diffusion barriers, high-k IPD to improve conventional DRAM and 3D NAND along with enhancements of peripheral devices are also welcome.
(4) Materials, processes, and technology to enable heterogeneous integration (HI) specifically relating to 2.5D/3-D through silicon via (TSV) integration, chip-to-chip, chip-to-wafer, wafer-to-wafer, and other packaging innovations. New processing technologies and equipment for synthesis and characterization of the materials and processes are also welcome. Advanced back-end materials and processes to enable chiplet stacking, redistribution layers (RDL) and optical interconnect processes and other advanced processes.
The deadline of Monday, 19 December 2022 has been reached. New submissions closed.
This symposium will address the most recent developments in processes at the semiconductor/solution interface including etching, oxidation, passivation, film growth, electrochemical and photoelectrochemical processes, water splitting, electrochemical surface science, electroluminescence, photoluminescence, surface texturing, and compound semiconductor electrodeposition, for photovoltaics, energy conversion and related topics. It will include both invited and contributed papers on both fundamental and applied topics of both bulk and nanoscale materials.
The following areas are of particular interest:
(1) Chemical, electrochemical and photoelectrochemical etching and surface texturing of III-V, II-VI and oxide semiconductors
(2) Surface film growth, multilayer deposition and surface passivation
(3) Porous semiconductor formation
(4) Electroanalytical measurements on both elemental and compound semiconductors including silicon, germanium, both bulk and epitaxial II-VI, III-V, IV-IV and organic materials in aqueous and non-aqueous electrolytes (5) Electronic and optical processes at the semiconductor/solution interface (6) Electroluminescence at the semiconductor/solution interface
(7) Photoluminescence spectroscopy including in situ potential-dependent measurements (8) Electrochemical impedance spectroscopy and investigations of flat-band potential
(9) Combined electrochemical and surface analytical and spectroscopic measurements
(10) Microscopic and surface analytical measurements on chemically and electrochemically modified semiconductor surfaces
(11) Chemical, electrochemical and photoelectrochemical techniques of device processing including etching, passivation, oxide growth and metallization
(12) Electrochemical techniques of semiconductor characterization
(13) Nanoscale electrochemical devices
(14) Electrochemical analytical techniques for semiconductor analysis and processing
(15) New developments in semiconductors, and oxide coated electrodes and material systems for water oxidation/splitting, and all methods of analysis and characterization
The deadline of Monday, 19 December 2022 has been reached. New submissions closed.