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An Amorphous Si Anode: A High Capacity Anode for All-Solid-State Lithium Battery
a‑Si films were deposited by RF‑magnetron sputtering onto stainless steel substrates (10 mm diameter) using CFS‑4EP‑LL (Shibaura Mechatronics). High-purity (99.999%) Si target was purchased from Kojundo Chemical Laboratory. In the cell assembling, In‑Li alloy was used as a counter electrode. 70Li2S‑30P2S5 glass ceramic5was selected as the solid electrolyte. The electrode performance of the films were investigated in the all-solid-state cell by using multichannel potentio-galvanostats, PS‑08 (Toho Technical Research) and VSP (Biologic).
Fig. 1(a) shows discharge curves for a 300‑nm‑thick a‑Si film at various current densities. The discharge capacity exceeds 2400 mAh/g even at the high discharge current density of 10 mA/cm2. In Fig. 1(b), the plateau voltages are plotted as a function of the current density, revealing linear relationship with current density. The slope derived from the linear relationship is 107 µÙ, which is almost the same as the resistance of the electrolyte layer in the solid-state cell. Therefore, it can be concluded that the overvoltage is predominantly originated from iR drop in the electrolyte layer and the kinetics of the electrode reaction is very fast. On the other hand, the large volumetric change in Si anodes was reported to promote growth of SEI layer, which raises the interfacial resistance to the order of 103 Ω cm2.6The low electrode resistance observed in this study suggests absence of SEI layer in this all-solid-state electrochemical system, which is considered to have positive effects on other electrode properties. They will be also discussed in the meeting.
AcknowledgementsFinancial support by the NEDO Japan and the Toyota Motor Corp. for a project entitled “Applied and Practical LiB Development for Automobile and Multiple Application” is gratefully acknowledged. We also thank the MANA Foundry and the NIMS Molecule & Material Synthesis Platform in “Nanotechnology Platform Project” operated by the MEXT Japan for the use of research facilities.
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