The TPB structure for our study is based on the (111) zirconia and (111) Ni slabs that are attached to each other as shown in Figure 1 [4]. Two dopants are introduced instead of two zirconium cations near the TPB (sites A and B). We also introduce oxygen vacancies into zirconia slab, whose number is appropriate to formal oxidation state of the dopants and to the fact that we consider one-oxygen rich zirconia slab in reactant structures (product structures are stoichiometric). In this work we consider three trivalent (Y, Sc, Al) and two divalent dopants (Ba, Ca). Three reaction mechanisms are considered: interface reaction, O spillover, and H spillover (terms are used according to notation by Shishkin et al. [5]). All calculations were performed with Vienna Ab initio Simulation Package (VASP) [6], which can perform electronic structure calculations based on the projector-augmented wave method and the generalized gradient approximation. To evaluate transition states, we performed nudge elastic band calculations as implemented in VASP by Henkelman et al. [7]. Obtained DFT results for the total energy of the structures were processed with open-circuit voltage (OCV) correction in a similar concept given by Nørskov et al. [8].
Energy profiles built for the HOR mechanisms allow to determine the most energetically favorable mechanism for each dopant. This judgement is based on energy barriers of the rate-limiting steps (activation energy). Obtained results for Y-doped TPB agree well with literature data that predicts interface reaction mechanism to be dominant with the rate-limiting step being H transfer from the nickel surface to oxygen ion at the TPB (as indicated in Figure 1 by blue line) [2-3,5]. Qualitatively similar results were obtained for Sc and Ba. In contrast, Al and Ca dopants make O spillover mechanism favorable with the rate-limiting step being O transfer from TPB region onto the nickel surface (as indicated in Figure 1 by red line). Considering dopants promoting the same HOR mechanism, activation energies for trivalent dopants are lower, which makes them better dopant candidates. Specifically, low activation energy of O spillover mechanism in Al-doped system makes Al best candidate to promote this mechanism. Background behind switching of the reaction mechanism with respect to dopant species is analyzed and discussed in this paper.
References
[1] Shishkin, M.; Ziegler, T. Phys. Chem. Chem. Phys. 2014, 16, 1798
[2] Cucinotta, C. S.; Bernasconi, M.; Parrinello, M. Phys. Rev. B 2011, 107, 206103
[3] Liu, S.; Ishimoto, T.; Monder, D. S.; Koyama, M. J. Phys. Chem. C 2015, 119, 27603
[4] Tada T. ECS Transactions 2015, 68, 2875
[5] Shishkin, M.; Ziegler, T. J. Phys. Chem. C 2010, 114, 11209
[6] Kresse, G.; Hafner, J. Phys. Rev. B. 1993, 47, 558
[7] Henkelman, G.; Jónsson, H. J. Chem. Phys. 2000, 113, 9901
[8] Nørskov, J.K; Rossmeisl, J.; Logadottir, A.; Lindqvist, L. J. Phys. Chem. B 2004, 108, 17886
Caption:
Figure 1. TPB model consisting of nickel and zirconia slabs. Nickel atoms are shown in black, oxygen - in red, zirconium - in white. Positions of cation dopants A and B are shown in green. Red line indicates O transfer step of O spillover mechanism, blue line - H transfer step of interface reaction mechanism.