946
Study of Mg Doping Profile in the p-Cladding Layer for High-Brightness AlGaInP-Based Light Emitting Diodes

Tuesday, May 14, 2013
Osgoode Ballroom, Lower Concourse Level (Sheraton)
Hwa Sub Oh , Korea Photonics Technology Institute, Gwangju, South Korea

Abstract:

  • E9-0946 (107.5KB) - Abstract Text
See more of: E9 - Poster Session
See more of: E9: Wide-Bandgap Semiconductor Materials and Devices 14
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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