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Effect of Electrode Material On Resistive Switching Characteristics in TaON Nonvolatile Memory Devices
Tuesday, May 14, 2013
Osgoode Ballroom, Lower Concourse Level (Sheraton)
Min-Chen Chen
,
National Sun Yat-Sen University, Kaohsiung, Taiwan
Ting-Chang Chang
,
National Sun Yat-Sen University
Yi-Chieh Chiu
,
Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
Shih-Cheng Chen
,
Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
Sheng-Yao Huang
,
National Sun Yat-Sen University, Kaohsiung, Taiwan
Yong-En Syu
,
Taiwan Semiconductor Manufacturing Company, Hsinchu, Taiwan
Kuan-Chang Chang
,
National Sun Yat-Sen University
Tsung-Ming Tsai
,
National Sun Yat-Sen University
Simon M. Sze
,
Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
Der-Shin Gan
,
National Sun Yat-Sen University
Hui-Chun Huang
,
National Sun Yat-Sen University
