939
Metal Catalyzed Porous n-type GaN Layers: Low Resistivity Ohmic Contacting and Single-Step MgO/GaN Diode Formation

Tuesday, May 14, 2013: 17:40
Spruce, Mezzanine Level (Sheraton)
O V Bilousov , Universitat Rovira i Virgili
Joan J Carvajal , Universitat Rovira i Virgili
D Drouin , Université de Sherbrooke
A Vilalta , CNRS-ENSICAEN-CEA-UCBN
P Ruterana , CNRS-ENSICAEN-CEA-UCBN
M C. Pujol , Universitat Rovira i Virgili
X. Mateos , Universitat Rovira i Virgili
F Díaz , Universitat Rovira i Virgili
M Aguiló , Universitat Rovira i Virgili
Colm O'Dwyer , University College Cork, Cork, Ireland

Abstract:

  • E9-0939 (182.3KB) - Abstract Text
See more of: Materials Growth and Synthesis
See more of: E9: Wide-Bandgap Semiconductor Materials and Devices 14
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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