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New Mechanism for Incline Crystal Growth and Carrier Path Transistion in Extremely Highly Doped Polymorphous Silicon Thin Film Formated by Neutral Beam Assisted CVD Process Near Room Temperature
New Mechanism for Incline Crystal Growth and Carrier Path Transistion in Extremely Highly Doped Polymorphous Silicon Thin Film Formated by Neutral Beam Assisted CVD Process Near Room Temperature
Monday, May 13, 2013: 14:40
Conference Room F, Mezzanine Level (Sheraton)
Abstract:
- E3-0785 (45.3KB) - Abstract Text