Graphene Devices

Monday, May 13, 2013: 08:25-10:10
Provincial Ballroom North, Second Floor (Sheraton)
Chairs:
Yaw S. Obeng , Durga Misra, Ph.D. and Stefan De Gendt
08:25
Welcoming Remarks
08:30
731
(Invited) Graphene Nanoribbon Growth and Dual-Gated Graphene Transistors
Shintaro Sato, Ph.D., National Institute of Advanced Industrial Science and Technology (AIST); Kenjiro Hayashi, Ph.D., National Institute of Advanced Industrial Science and Technology (AIST); Shu Nakaharai, Ph.D., National Institute of Advanced Industrial Science and Technology (AIST); Naoki Yokoyama, Ph.D., National Institute of Advanced Industrial Science and Technology (AIST)
09:00
732
(Invited) Toward Ambient-Stable Molecular Gated Graphene-FET: A Donor/Acceptor Hybrid Architecture to Achieve Bandgap in Bilayer Graphene
Amirhasan Nourbakhsh, PhD, imec; Mirco Cantoro, IMEC; Marc M. Heyns, imec; Bert F Sels, Katholieke Universiteit Leuven; Stefan De Gendt, imec
09:30
733
Transfer-Free Bilayer Graphene FETs: Application as Memory Devices
Pia Juliane Wessely, Technische Universität Darmstadt, ISTN; Udo Schwalke, Prof. Dr., Technische Universität Darmstadt, ISTN
09:50
Coffee Break
See more of: E2: Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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