Graphene Electronics

Monday, May 13, 2013: 14:00-16:30
Provincial Ballroom North, Second Floor (Sheraton)
Chairs:
Deji Akinwande and Kenneth B.K. Teo
14:00
738
Graphene Electronics and Optoelectronics
Phaedon Avouris, IBM, T.J. Watson Research Center
14:30
739
(Invited) Recent Advances in Graphene RF Electronics: Opportunities
Jeong-sun Moon, HRL Laboratories; D.K. Gaskill, U. S. Naval Research Laboratory; Peter Asbeck, University of California at San Diego
15:00
740
(Invited) Graphene Transistors for Ambipolar Mixing at Microwave Frequencies
Himanshu Madan, The Pennsylvania State University; Matthew J Hollander, The Pennsylvania State University; Joshua A. Robinson, The Pennsylvania State University; Suman Datta, PhD, The Pennsylvania State University
15:30
Intermission
15:40
741
(Invited) Graphene Based Tunable Schottky Diode for High Performance Devices
Jinseong Heo, Ph.D., Samsung Advanced Institute of Technology; Hyun Jae Song, Ph. D., Samsung Advanced Institute of Technology; Kyung-Eun Byun, Samsung Advanced Institute and Technology; David S. Seo, Samsung Advanced Institute and Technology; Seongjun Park, Ph. D., Samsung Advanced Institute of Technology
16:10
742
Effect of Gate Dielectric on Ballistic Transport of Cylindrical Carbon Nanotube MOSFET
Md. Shafayat Hossain, Bangladesh University of Engineering and Technology; Saeed Uz Zaman Khan, Bangladesh University of Engineering and Technology; Ahmedullah Aziz, Bangladesh University of Engineering and Technology; Mohammad Wahidur Rahman, Bangladesh University of Engineering and Technology; Muhammad Abdullah Arafat, Bangladesh University of Engineering and Technology
See more of: E2: Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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