Memory Devices I

Wednesday, May 15, 2013: 08:20-10:00
Conference Room F, Mezzanine Level (Sheraton)
Chair:
Minoru Fujii
08:20
802
(Invited) Resistive Switching in Silicon Oxide Containing Silicon Nanoinclusions
Anthony Kenyon, UCL; Adnan Mehonic, UCL
09:00
803
(Invited) Understanding the Role of Dopants in Transition Metal Oxide Dielectrics for Digital and Analog Resistive Switching
Branden Long, University of Toledo; Saptarshi Mandal, University of Toledo; Yibo Li, University of Toledo; Wenbo Chen, University of Toledo; Ammaarah El-Amin, University of Toledo; Rashmi Jha, PhD, University of Toledo
09:40
Break
See more of: E3: Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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