Memory Devices II

Wednesday, May 15, 2013: 10:00-12:05
Conference Room F, Mezzanine Level (Sheraton)
Chair:
Tom Gregorkiewicz
10:00
804
(Invited) Nanocrystals Embedded High-k Nonvolatile Memories – Bulk Film and Nanocrystal Material Effects
Yue Kuo, Texas A&M University
10:40
805
Improved Performance of Silicon Nanocrystal Memories for Application Working Over a Wide Range of Temperature
Vincenzo Della Marca, STMicroelectronics - Rousset; Julien Amouroux, STMicroelectronics - Rousset; Gabriel Molas, CEA-LETI MINATEC; Jérémy Postel-Pellerin, IM2NP-CNRS, Aix-Marseille Université; Frédéric Lalande, IM2NP-CNRS, Aix-Marseille Université; Philippe Boivin, STMicroelectronics - Rousset; Jean-Luc Ogier, STMicroelectronics - Rousset
11:00
806
(Invited) Electrical Conductivity Bistability in Nano-Composite
Dominic C. Prime, Emerging Technologies Research Centre, De Montfort University, Leicester, UK; Zahra Al Halafi, De Montfort University; Mark A Green, Department of Physics, King's College London, U.K; Iulia Salaoru, De Montfort University; Shashi Paul, De Montfort University
11:40
807
Field-Effect Transistors, Memory, and Logic Circuit Using DNA-Bases Embedded Dielectrics
Junyeong Lee, Yonsei University; Jin Sung Kim, Yonsei University; Ji Hoon Park, Yonsei University; Young Tack Lee, Yonsei University; Hee Sung Lee, Yonsei University; Pyo Jin Jeon, Yonsei University; Seongil Im, Ph.D, Yonsei University
12:00
Concluding Remarks
See more of: E3: Nanocrystal Embedded Dielectrics for Electronic and Photonic Devices
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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