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Effects of Sulfur Passivation On Ge/Gesn Mos Capacitors With HfO2 Gate Dielectric
Tuesday, October 29, 2013
Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)
Mei Zhao
,
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing, China
Ren Rong Liang
,
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University
Jing Wang
,
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University
Jun Xu
,
Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University
