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Leakage Current Analysis Depends on Grain Size Variation in Zinc Oxide Thin Film Transistor
Leakage Current Analysis Depends on Grain Size Variation in Zinc Oxide Thin Film Transistor
Tuesday, October 29, 2013
Grand Ballroom, Tower 2, Grand Ballroom Level (Hilton San Francisco Union Square)
Abstract:
- A1-0076 (316.7KB) - Abstract Text