PCRAM

Thursday, October 31, 2013: 15:50-17:40
Golden Gate 1, Tower 3, Lobby Level (Hilton San Francisco Union Square)
Chairs:
A. Sebastian and Zia Karim
15:50
2022
Phase Change Memory – The Interplay Between Thermal and Electrical Effects
Rakesh G. D. Jeyasingh, Stanford University; Scott W. Fong, Stanford University; Jaeho Lee, Stanford University; Elah Bozorg-Grayeli, Stanford University; Chiyui Ahn, Stanford University; Mehdi Asheghi, Stanford University; Kenneth E. Goodson, Stanford University; H.-S. Philip Wong, Stanford University
16:20
2023
Correlated Nano-Oxides for Electronic Phase Change Electronics
Hidekazu Tanaka, Institute of Scientific and Industrial Research, Osaka University
16:50
2024
Entropy-Controlled Phase Change Memory With An Extraordinary Small Switching Energy
Junji Tominaga, Ph. D., National Institute of Advanced Industrial Science and Technology (AIST); Paul J Fons, Ph. D., National Institute of Advanced Industrial Science and Technology (AIST); Alexander V. Kolobov, Ph. D., National Institute of Advanced Industrial Science and Technology (AIST); Shuichi Murakami, Ph. D., Tokyo Instutute of Technology
17:20
2025
Special  Electric Characteristics of Superlattice Phase Change Memory
Takasumi Ohyanagi, Low-power Electronics Association & Project; Masahito Kitamura, Low-power Electronics Association & Project; Norikatsu Takaura, Low-power Electronics Association & Project
See more of: E5: Nonvolatile Memories
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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