STTMRAM 2

Thursday, October 31, 2013: 14:00-15:30
Golden Gate 1, Tower 3, Lobby Level (Hilton San Francisco Union Square)
Chairs:
K-J. Lee and Yoshishige Suzuki
14:00
2018
(Invited) Recent Developments in ST-MRAM, Including Scaling
E. J. O'Sullivan, IBM T.J. Watson Research Center; M. J. Gajek, IBM T.J. Watson Research Center; J. J. Nowak, IBM T.J. Watson Research Center; S. L. Brown, IBM T.J. Watson Research Center; M. C. Gaidis, IBM T.J. Watson Research Center; G. Hu, IBM T.J. Watson Research Center; J. Z. Sun, IBM T.J. Watson Research Center; P. L. Trouilloud, IBM T.J. Watson Research Center; D. W. Abraham, IBM T.J. Watson Research Center; R. P. Robertazzi, IBM T.J. Watson Research Center; W. J. Gallagher, IBM T.J. Watson Research Center; D. C. Worledge, IBM T.J. Watson Research Center
14:30
2019
Voltage-Induced Nonvolatile Change of Magnetic Anisotropy of CoFeB Ultrathin Films Stacked With Multivalent Oxides
Jiro Koba, Department of Materials Engineering, The University of Tokyo; Koji Kita, PhD, The University of Tokyo
14:50
2020
Surface Roughness Effects of Pt Seed-Layer Under Full-Heusler Co2feal/MgO-Based Magnetic Tunnel Junctions On Perpendicular Magnetic Anisotropy
Kyo-Suk Chae, M.S., Hanyang University; Du-Yeong Lee, M.S., Hanyang University; Min-Su Jeon, B.S., Hanyang University; Seung-Eun Lee, B.S., Hanyang University; Tae-Hun Shim, Ph.D., Hanyang University; Jea-Gun Park, PhD, Hanyang University
15:10
2021
High Thermal Stability of Magnetic Tunnel Junctions With Perpendicular Magnetic Anisotropy Using a Co2feal Full-Heusler Alloy
Min-Su Jeon, B.S., Hanyang University; Du-Yeong Lee, M.S., Hanyang University; Seung-Eun Lee, B.S., Hanyang University; Yasutaka Takemura, M.S., SUMCO Corporation; Kyo-Suk Chae, M.S., Hanyang University; Tae-Hun Shim, Ph.D., Hanyang University; Jea-Gun Park, PhD, Hanyang University
See more of: E5: Nonvolatile Memories
See more of: Dielectric and Semiconductor Materials, Devices, and Processing
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