Phosphorus-Doped P-Type ZnO Nanowires and Their Electrical Properties

Thursday, May 15, 2014: 10:30
Manatee, Ground Level (Hilton Orlando Bonnet Creek)
W. C. Li (Department of Material science and engineering, National Chiao Tung University), C. W. Huang, J. Y. Chan (Department of Materials Science and Engineering, National Chiao Tung University), and W. W. Wu (Department of Material science and engineering, National Chiao Tung University)
Among variety of 1-D materials, ZnO nanowires (NWs) has attracted extensive attention due to its specific physical properties. For wide-ranging applications in nanoscale electronic devices, p-type ZnO NWs even have excellent electrical properties. In this work, ZnO NWs were synthesized with P2O5 as a dopant source via the hydrothermal method which used zinc acetate and hexamethylenetetramine (HMTA) mixed solution as the precursor. The morphology and aspect ratio of aligned phosphorus-doped ZnO NWs arrays were examined by field emission scanning electron microscope (FESEM). The effect of various phosphorus-doped concentration were systematically discussed. The X-ray diffractometer (XRD) and the high resolution transmission electron microscope (HRTEM) image indicated that the NWs are single-crystalline with <0001> growth direction. The results of temperature-dependent photoluminescence (PL) spectra revealed that both phosphorus-doped and undoped ZnO NWs show a UV light emission (370–380 nm) and a defect-related emission (400–750 nm). The phosphorus-doped ZnO NWs enhanced defect-related emission intensity. The electrical transport properties and field effect transistors (FETs) confirmed that p-type conductivity of the single phosphorus-doped ZnO NW. The phosphorus-doped ZnO NWs were successfully synthesized by hydrothermal method and showed characteristics of the p-type conductivity.