(Invited) Inhomogeneous Strain in Silicon Photonics

Wednesday, May 14, 2014: 10:40
Lake, Ground Level (Hilton Orlando Bonnet Creek)
R. Wehrspohn (Martin-Luther-University Halle-Wittenberg, Fraunhofer Institut fr Werkstoffmechanik), C. Schriever, and J. Schilling (Martin-Luther-University Halle-Wittenberg)

A review of recent progress in the field of strained silicon photonics is presented. The application of strain to waveguide and photonic crystal structures can be used to alter the linear and nonlinear optical properties of these devices. Here, methods for the fabrication of strained devices are summarized and recent examples of linear and nonlinear optical devices are discussed. Furthermore, the relation between strain and the enhancement of the second order nonlinear susceptibility is investigated, which may enable the construction of optically active photonic devices made of silicon.