Anisotropic Magnetoresistance of Ferromagnetic Conductive Filament in Resistive Switching Memory 

Wednesday, 8 October 2014: 11:40
Expo Center, 1st Floor, Universal 5 (Moon Palace Resort)
S. Otsuka, Y. Hamada, T. Shimizu, and S. Shingubara (Kansai University)
A resistive switching (RS) memory has been expected to be a next-generation memory owing to its high density, low power consumption, and high switching speed. The mechanism of the reversible RS phenomenon has been considered in terms of the formation and rupture of conductive filaments (CF). Recently, it has been reported that a ferromagnetic CF was formed in NiO-based RS memory. This suggested the possibility of the new device that has both RS memory and spintronics device functions. The presence of a ferromagnetic CF in the NiO layer was confirmed by measuring the magnetization of the large number of CFs at room temperature using a SQUID magnetometer. Although, it is not yet confirmed that a single ferromagnetic CF is formed by the SET process. The purpose of this study is to understand the physical properties of a single ferromagnetic CF by focusing on magnetoresistance (MR).

   We prepared Ni/HfO2/Pt memory device, having ferromagnetic Ni electrode and the oxide of a non-magnetic metal. The fabricated RS memory devices have a cross-bar structure. The crossed electrode size is 1×1 mm2.

   RS characteristic was measured with the bipolar operation mode. When current limit is 5 mA, the anisotropic magnetoresistance (AMR) was observed in the low resistance state. The direction of the external magnetic field is in-plane to the substrate, and the current is perpendicular to the magnetic field. The AMR showed a convex behavior with magnetic field, and the MR ratio was approximately 0.15%. It is strongly suggested that AMR came from a ferromagnetic CF formed in the oxide layer. Further discussions will be shown in the workshop.