ReRAM-1

Wednesday, 8 October 2014: 10:00-12:00
Expo Center, 1st Floor, Universal 5 (Moon Palace Resort)
Chairs:
Shoso Shingubara and Gennadi Bersuker
10:00
Welcoming Remarks
10:10
2034
(Keynote) Atomic Scale and Interface Interactions in Redox-Based Resistive Switching Memories
I. Valov (Research Centre Juelich), S. Tappertzhofen, E. Linn (Institut fuer Werkstoffe der Elektrotechnik II), S. Menzel (Research Centre Juelich), J. van den Hurk (Institut der Werkstoffe der Elektrotechnik 2), and R. Waser (Electronic Materials)
10:50
2035
(Invited) Elucidating the Origin of Resistive Switching in Ultrathin Hafnium Oxides through High Spatial Resolution Tools
Y. Shi, Y. Ji, F. Hui (Soochow University), V. Iglesias, M. Porti, M. Nafria, E. Miranda (Universitat Autonoma de Barcelona), G. Bersuker (SEMATECH), and M. Lanza (Soochow University)
11:20
2036
In Situ Analysis of Filaments in Oxides Thin Film Reram, SrTiO3, NiO/TiO2, by TEM
D. H. Kwon (Seoul National University), S. B. Lee (Oak Ridge National Laboratory), C. S. Kang, S. J. Song, H. L. Cho, S. J. Kang, W. Son, K. H. Oh, C. S. Hwang (Seoul National University), T. W. Noh (IBS, Seoul National University), and M. Kim (Seoul National University)
11:40
2037
Anisotropic Magnetoresistance of Ferromagnetic Conductive Filament in Resistive Switching Memory 
S. Otsuka, Y. Hamada, T. Shimizu, and S. Shingubara (Kansai University)
See more of: Q5: Nonvolatile Memories
See more of: Electronic and Photonic Devices and Systems
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