Nonvolatile Memory Device Using Mobile Protons via Insertion Hydrogen Neutral Beam Treatment Process between SiO2 Deposition Processes at Room Temperature

Wednesday, 8 October 2014: 14:30
Expo Center, 1st Floor, Universal 4 (Moon Palace Resort)
J. N. Jang (Display and Semiconductor Physics, Korea University, Center for Advanced Photonic Materials, Korea University), D. H. Lee, S. Jeon, J. Park, and M. Hong (Display and Semiconductor Physics, Korea University)
We demonstrated the nonvolatile memory functionality of nano-crystalline silicon (nc-Si) field effect transistors (FETs) using mobile protons that are generated by very short time (within 2 minutes) hydrogen neutral beam (H-NB) treatment at room temperature (25 °C). Some researches try to hydrogen insertion process via long time (40 minutes) high-pressure hydrogen annealing (HPHA) at high temperature (400 °C) that also need several steps such as poly silicon deposition, HPHA process, and poly silicon etching process. However our hydrogen insertion process does not need any other additional process but only H-NB process during normal thin film transistor fabrication. Also the whole memory fabrication process kept under 50 °C (except SiO2deposition process; 300 °C). These nc-Si devices exhibited reproducible hysteresis, reversible switching, and nonvolatile memory behaviors in comparison with those of the conventional FET devices. We think that the memory characteristics are attributed to the movement of protons between the Si(gate)/SiO2(gate insulator) interface and the SiO2/nc-Si thin film (active layer) interface by the applied gate electric field. Our study will further provide a useful route of creating memory functionality and incorporating proton-based storage elements onto a modified CMOS platform for FET memory devices using nanomaterials, and probability of next generation flexible memorable electronics.