Improved Resistive Memory Switching Characteristics of Gold Nanoparticles Embedded Graphene Oxide

Resistive random access memory (ReRAM) has recently attracted great attention due to its potential for replacement of flash memory in next-generation nonvolatile memory applications. However, ReRAM devices are facing the problem of stability and repeatability which can be ascribed to the randomness of the conducting filaments formation. Nanoparticles are found to enhance electric field in their vicinity, which is anticipated to define the conductive filament precisely and favorable for the improved switching characteristics if embedded in devices. We have fabricated thin films of graphene oxide with embedded gold nanoparticles through spin coating on ITO/Glass substrates. Top electrodes of Aluminum were deposited using thermal evaporation through a shadow mask. Current-Voltage measurements were carried out using Keithley 2401 in top-bottom configuration at room temperature. The switching characteristics of the device with gold nanoparticles performed well in regard to stable and repeatable switching between low resistance and high resistance states along with low switching voltages with narrow window for switching voltages. These devices showed improved and stable resistance ratio over the period of 10⁴ sec and hence it had good retention and endurance properties. These devices can be seen as potential candidates for memory applications in regard to repeatability and stability.