2153
Surface Roughness Influences on the ZnO Reram

Tuesday, 7 October 2014: 12:05
Expo Center, 1st Floor, Universal 6 (Moon Palace Resort)
J. J. Ke (Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan, ROC), K. Namura (Department of Micro Engineering, Kyoto University, Kyoto, Japan), T. C. Wei (Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan), J. H. He (National Taiwan University), and M. Suzuki (Department of Micro Engineering, Kyoto University, Kyoto, Japan)
The oxygen chemisorption raising from surface roughness associated with the formation/rupture of conductive filaments dramatically affects the electrical properties of ZnO ReRAM, which is confirmed by the oxygen adsorption induced threshold voltage shift of the FET measurements. The lower oxygen adatom concentration changes of rougher surface under various measuring ambient condition, leading to the improvement of the electrical property stability on both SET/RESET switching voltage and HRS/LRS resistance. The thickness-independent HRS resistance and the better switching probability shown in the ZnO with rougher surface, indicating that the oxygen chemisorption on the surface dominates resistive switching process. Our findings give a guidelines for developing practically useful applications of ZnO-based ReRAM.
See more of: Session III
See more of: Q9: State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS 56)
See more of: Electronic and Photonic Devices and Systems
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