Session III

Tuesday, 7 October 2014: 08:45-12:20
Expo Center, 1st Floor, Universal 6 (Moon Palace Resort)
Chairs:
Michael Shur and Ammar Nayfeh
08:45
2147
Compound Semiconductor Nanowires for Optoelectronic Device Applications
H. Tan (The Australian National University)
09:15
2148
High-Performance Sb-Based III-V Nanowires Synthesized on Amorphous Substrates: From the Formation Mechanism to p-Channel Transistor Applications
J. C. Ho (City University of Hong Kong)
09:45
Break
10:05
2149
Room-Temperature Defect-Enabled Spin Functionality in GaAs-Based Coumpound Semiconductors
W. M. Chen and I. A. Buyanova (Linkoping University)
10:35
2150
A Quick and a Flexible Hydride Vapor Phase Epitaxy Process to Achieve Buried Heterostructure Quantum Cascade Lasers
W. Metaferia (KTH-Royal Institute of Technology), B. Simozrag (III-V Lab - Thales Research and Technology France), C. Junesand (Epiclarus AB), Y. T. Sun (KTH-Royal Institute of Technology), M. Carras (III-V Lab - Thales Research and Technology France), and S. Lourdudoss (KTH - Royal Institute of Technology)
11:05
2151
Innovative III-Nitride Epitaxy Approach for Low Dislocation GaN and Free-Standing GaN Substrate
X. D. Hu, J. J. Wu, D. Li, L. Li, Q. Ji, H. Zong, T. Han (Peking University), and Y. Xie (University of California Los Angeles)
11:35
2152
III-V Nanowire MOSFETs in RF-Applications
L. E. Wernersson (Lund University)
12:05
2153
Surface Roughness Influences on the ZnO Reram
J. J. Ke (Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan, ROC), K. Namura (Department of Micro Engineering, Kyoto University, Kyoto, Japan), T. C. Wei (Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, Taiwan), J. H. He (National Taiwan University), and M. Suzuki (Department of Micro Engineering, Kyoto University, Kyoto, Japan)
See more of: Q9: State-of-the-Art Program on Compound Semiconductors 56 (SOTAPOCS 56)
See more of: Electronic and Photonic Devices and Systems
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