Oxide TFT Processes I

Tuesday, 7 October 2014: 08:30-11:40
Expo Center, 1st Floor, Universal 4 (Moon Palace Resort)
Chairs:
Michael Shur and Hiroki Hamada
08:30
1913
(Invited) Crystalline Oxide Semiconductor Using CAAC-IGZO and its Application
S. Yamazaki (Semiconductor Energy Laboratory Co., Ltd.)
09:00
1914
(Invited) Gate Insulator for High Mobility Oxide TFT
S. H. K. Park (KAIST), H. O. Kim, S. H. Cho, M. K. Ryu, J. H. Yang (ETRI), J. B. Ko (KAIST), and C. S. Hwang (ETRI)
09:30
1915
Gate-Insulator-Capacitance-Dependent Field-Effect Mobility in Solution-Processed Oxide Semiconductor Thin-Film Transistors
E. Lee, K. H. Lim, S. Y. Park, K. Kim (Seoul National University, The Graduate School of Convergence Science and Technology, Program in Nano Science and Technology), and Y. S. Kim (Advanced Institutes of Convergence Technology, Seoul National University, The Graduate School of Convergence Science and Technology, Program in Nano Science and Technology)
09:50
Intermission
10:20
1916
(Invited) Self-Aligned Bottom-Gate InGaZnO Thin-Film Transistor with Source and Drain Regions Formed by Selective Deposition of Fluorinated SiNx Passivation
M. Furuta, J. Jiang, G. Tatsuoka, and D. Wang (Kochi University of Technology)
10:50
1917
(Invited) Solution Processed Oxide Thin Film Transistors
C. Avis and J. Jang (Kyung Hee University)
 
Low-Cost Dopants for High Performance and Aqueous-Derived ZnO Thin-Film Transistors (Cancelled)
See more of: Q10: Thin Film Transistors 12 (TFT 12)
See more of: Electronic and Photonic Devices and Systems
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