Atomic-Monolayer Thermoelectric Conversion in Two-Dimensional Chalcogenides

Monday, 6 October 2014: 16:40
Expo Center, 1st Floor, Universal 5 (Moon Palace Resort)
M. H. Jo (University of Science and Technology (POSTECH))
Electronic structures of bismuth telluride, the highest thermoelectric figure of merit at room temperature, are substantially modified by electronic confinements and strong spin-orbit coupling in the few-monolayers thickness regime. Here, by local optical probes, we show direct evidence that efficient thermoelectric current generation is available at the few-monolayers thick bismuth telluride by hot electrons motions through two-dimensional subbands and topologically protected surface states. Our study offers a challenging opportunity to investigate the fundamental photoresponse of topological quantum states, and provides a new design rule for the highly efficient thermoelectric circuitry.