Electronic Materials and Processing

Monday, 6 October 2014

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10:00-11:50

P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications


Fundamentals of Wafer Bonding
Expo Center, 1st Floor, Universal 9
Chair(s): Hubert Moriceau

10:00-12:00

P3: High Purity and High Mobility Semiconductors 13


Crystal Growth and Point Defects
Expo Center, 1st Floor, Universal 17
Chair(s): Jan Vanhellemont

P1: Atomic Layer Deposition Applications 10


General ALD Session
Expo Center, 1st Floor, Universal 16
Chair(s): O. van der Straten and Gijs Dingemans

10:00-12:10

P8: Thermoelectric and Thermal Interface Materials


Thermoelectric Materials I
Expo Center, 1st Floor, Universal 5
Chair(s): Colm O'Dwyer, Jr-Hau He and Kafil M. Razeeb

10:15-12:25

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Plenary Session
Expo Center, 1st Floor, Universal 12
Chair(s): D. L. Harame

13:00-15:00

P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications


Layer Transfer Techniques
Expo Center, 1st Floor, Universal 9
Chair(s): Frank Fournel and Gerhard Kalkowski

13:00-16:00

P5: Processing Materials of 3D Interconnects, Damascene, and Electronics Packaging 6


Through Silicon Via I
Expo Center, 1st Floor, Universal 13
Chair(s): Kazuo Kondo, S. Mathad, Rohan Akolkar and Wei-Ping Dow

13:40-15:00

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


HBT I: Advanced SiGe HBT Technology
Expo Center, 1st Floor, Universal 8
Chair(s): G. Niu and M. Ostling

13:40-15:40

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Surfaces & Interfaces 1: Characterization and Process Control
Expo Center, 1st Floor, Universal 7
Chair(s): Seiichi Miyazaki and Shigeaki Zaima

13:50-17:40

P8: Thermoelectric and Thermal Interface Materials


Thermoelectric Materials II
Expo Center, 1st Floor, Universal 5
Chair(s): Kafil M. Razeeb

14:00-16:20

P3: High Purity and High Mobility Semiconductors 13


Oxygen in Silicon
Expo Center, 1st Floor, Universal 17
Chair(s): Robert J Falster

14:00-17:00

P1: Atomic Layer Deposition Applications 10


ALD Reactor Design/Plasmonics I
Expo Center, 1st Floor, Universal 16
Chair(s): O. van der Straten and Anil U. Mane

15:20-17:50

P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications


III-V Wafer Bonding Applications
Expo Center, 1st Floor, Universal 9
Chair(s): Maik Wiemer and Oussama Moutanabbir

15:55-18:15

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Processing 1
Expo Center, 1st Floor, Universal 8
Chair(s): Marco Lisker and Didier Dutartre

16:30-17:30

P3: High Purity and High Mobility Semiconductors 13


Epitaxy for Strain Engineering
Expo Center, 1st Floor, Universal 17
Chair(s): Eddy Simoen

Tuesday, 7 October 2014

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07:50-09:20

P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications


Characterization of Bonded Wafers and Devices Part I
Expo Center, 1st Floor, Universal 9
Chair(s): Karl D Hobart

08:00-09:40

P3: High Purity and High Mobility Semiconductors 13


High Mobility Materials and Advanced Devices
Expo Center, 1st Floor, Universal 17
Chair(s): Cor Claeys and Giovanni Capellini

08:00-10:00

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Processing 2
Expo Center, 1st Floor, Universal 8
Chair(s): Shigeaki Zaima and Stefano Chiussi

08:00-12:40

P5: Processing Materials of 3D Interconnects, Damascene, and Electronics Packaging 6


Through Silicon Via II
Expo Center, 1st Floor, Universal 13
Chair(s): Shoso Shingubara and Mitsumasa Koyanagi

08:10-12:00

P9: Transparent Conducting Materials for Electronic and Photonics


Transparent Conducting Nanomaterials
Expo Center, 1st Floor, Universal 10
Chair(s): Colm O'Dwyer and Jong Kyu Kim

08:20-09:40

P1: Atomic Layer Deposition Applications 10


Molecular Layer Deposition
Expo Center, 1st Floor, Universal 16
Chair(s): F. Roozeboom and J. W. Elam

08:50-11:40

P4: Plasma Processing 20


General Plasma Processes
Expo Center, 1st Floor, Universal 5
Chair(s): S. Mathad and O. M. Leonte

09:40-10:40

P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications


Temporary Wafer Bonding
Expo Center, 1st Floor, Universal 9
Chair(s): Laurent Brunet and Ralf Hausner

10:00-12:00

P1: Atomic Layer Deposition Applications 10


Advanced Semiconductor Applications I
Expo Center, 1st Floor, Universal 16
Chair(s): Laura Nyns, Stefan De Gendt and Robert M Wallace

P3: High Purity and High Mobility Semiconductors 13


Ge-based Devices
Expo Center, 1st Floor, Universal 17
Chair(s): Giovanni Capellini and Cor Claeys

10:15-11:45

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Surfaces & Interfaces 2: Channel and Gate Stack Technology 2014
Expo Center, 1st Floor, Universal 7
Chair(s): Seiichi Miyazaki and Shigeaki Zaima

10:15-11:55

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


HBT 2: Optimization, Characterization, and Modeling
Expo Center, 1st Floor, Universal 8
Chair(s): G. Niu and Rudolf Lachner

11:00-12:00

P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications


Characterization of Bonded Wafers and Devices Part II
Expo Center, 1st Floor, Universal 9
Chair(s): Lukas Czornomaz

13:00-16:50

P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications


Wafer Bonding for MEMS and Packaging
Expo Center, 1st Floor, Universal 9
Chair(s): Chuan Seng Tan and Julie Widiez

13:20-15:30

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Joint FET and Strain 1: Germanium FETs
Expo Center, 1st Floor, Universal 8
Chair(s): Y. Yee Chia and Ken Uchida

13:40-15:20

P9: Transparent Conducting Materials for Electronic and Photonics


Multi-functional Optoelectronic Materials
Expo Center, 1st Floor, Universal 10
Chair(s): Jr-Hau He

13:40-16:20

P4: Plasma Processing 20


Plasma Etching Processes
Expo Center, 1st Floor, Universal 5
Chair(s): M. Engelhardt and Dennis W. Hess

14:00-15:20

P1: Atomic Layer Deposition Applications 10


Advanced Semiconductor Applications II
Expo Center, 1st Floor, Universal 16
Chair(s): Stefan DeGendt and Robert M Wallace

14:00-15:40

P3: High Purity and High Mobility Semiconductors 13


Doping and Junctions
Expo Center, 1st Floor, Universal 17
Chair(s): Gudrun Helga Kissinger and Ruben R. Lieten

15:00-17:00

P5: Processing Materials of 3D Interconnects, Damascene, and Electronics Packaging 6


Fundamentals in Electrodeposition I
Expo Center, 1st Floor, Universal 13
Chair(s): Masanori Hayase and Rohan Akolkar

15:40-17:00

P9: Transparent Conducting Materials for Electronic and Photonics


Solar Cell and Polymer Materials
Expo Center, 1st Floor, Universal 10
Chair(s): Jong Kyu Kim

15:40-17:20

P1: Atomic Layer Deposition Applications 10


New ALD Materials and Processes I
Expo Center, 1st Floor, Universal 16
Chair(s): J. W. Elam and Christian Dussarrat

15:45-17:25

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Optoelectronics 1: Emission
Expo Center, 1st Floor, Universal 8
Chair(s): Gianlorenzo Masini

16:00-17:20

P3: High Purity and High Mobility Semiconductors 13


Metals and Gettering
Expo Center, 1st Floor, Universal 17
Chair(s): Ruben R. Lieten and Gudrun Helga Kissinger

18:00-20:00

P1: Atomic Layer Deposition Applications 10


P1 Poster Session
Expo Center, 1st Floor, Center and Right Foyers

P3: High Purity and High Mobility Semiconductors 13


P3 Poster Session
Expo Center, 1st Floor, Center and Right Foyers

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


P7 Poster Session
Expo Center, 1st Floor, Center and Right Foyers

P8: Thermoelectric and Thermal Interface Materials


P8 Poster Session
Expo Center, 1st Floor, Center and Right Foyers

P9: Transparent Conducting Materials for Electronic and Photonics


P9 Poster Session
Expo Center, 1st Floor, Center and Right Foyers

Wednesday, 8 October 2014

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07:40-10:00

P5: Processing Materials of 3D Interconnects, Damascene, and Electronics Packaging 6


Fundamentals in Electrodeposition II
Expo Center, 1st Floor, Universal 13
Chair(s): Masanori Hayase and Rohan Akolkar

07:50-09:20

P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications


Other Wafer Bonding Applications
Expo Center, 1st Floor, Universal 9
Chair(s): Helmut Baumgart and Tadatomo Suga

08:00-09:20

P3: High Purity and High Mobility Semiconductors 13


Characterization
Expo Center, 1st Floor, Universal 17
Chair(s): Andre Stesmans and Eddy Simoen

08:00-09:40

P1: Atomic Layer Deposition Applications 10


New ALD Materials and Processes II
Expo Center, 1st Floor, Universal 16
Chair(s): O. van der Straten and Thomas Henke

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Related Compounds 1
Expo Center, 1st Floor, Universal 8
Chair(s): Pouya Hashemi and M Bauer

10:00-11:40

P1: Atomic Layer Deposition Applications 10


Energy Applications I
Expo Center, 1st Floor, Universal 16
Chair(s): F. Roozeboom and Andrew G. Scheuermann

10:00-12:00

P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications


Low Temperature Wafer Bonding
Expo Center, 1st Floor, Universal 9
Chair(s): Mark Goorsky and Takehito Shimatsu

10:00-12:40

P3: High Purity and High Mobility Semiconductors 13


Point and Extended Defects
Expo Center, 1st Floor, Universal 17
Chair(s): Eddy Simoen and Andre Stesmans

10:20-12:00

P5: Processing Materials of 3D Interconnects, Damascene, and Electronics Packaging 6


Copper Damascene
Expo Center, 1st Floor, Universal 13
Chair(s): Wei-Ping Dow and F. Roozeboom

10:25-12:05

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Joint Epitaxy & Related Compounds 1: III-V Compounds
Expo Center, 1st Floor, Universal 7
Chair(s): A. Hikaviv and Masahiko Hata

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Joint FET and Strain 2: Tunnel FETs and Strained Bulk and SOI "Finned" FETs
Expo Center, 1st Floor, Universal 8
Chair(s): Atsushi Ogura and Y. Yee Chia

13:20-14:40

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Emerging Devices and Applications 1: Quantum Effects/Spintronics
Expo Center, 1st Floor, Universal 8
Chair(s): Daniel R Ward and Antonio Samarelli

14:00-15:20

P1: Atomic Layer Deposition Applications 10


Energy Applications II
Expo Center, 1st Floor, Universal 16
Chair(s): O. van der Straten and Parag Banerjee

14:00-15:40

P5: Processing Materials of 3D Interconnects, Damascene, and Electronics Packaging 6


Electronics Packaging
Expo Center, 1st Floor, Universal 13
Chair(s): S. Mathad and Shoso Shingubara

14:00-17:00

P6: Semiconductor Wafer Bonding 13: Science, Technology, and Applications


Metal Bonding and 3D-Integration
Expo Center, 1st Floor, Universal 9
Chair(s): Roy Knechtel and Mark Goorsky

14:55-16:45

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Epitaxy 1: Low-dimensional Epitaxial Systems
Expo Center, 1st Floor, Universal 8
Chair(s): Alois Lugstein and C Merckling

15:20-16:10

P1: Atomic Layer Deposition Applications 10


Plasmonics II/Closing Remarks
Expo Center, 1st Floor, Universal 16
Chair(s): J. W. Elam and F. Roozeboom

18:00-20:30

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Workshop on Next Generation Devices
Expo Center, 1st Floor, Universal 8
Chair(s): Krishna C. Saraswat

Thursday, 9 October 2014

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08:00-09:50

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


GeSn Session 1: GeSn Epitaxy 1
Expo Center, 1st Floor, Universal 8
Chair(s): Benjamin Vincent

08:20-09:40

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Optoelectronics 2:  Photodetection
Expo Center, 1st Floor, Universal 11
Chair(s): Gianlorenzo Masini

10:05-11:35

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


GeSn Session 2: GeSn Epitaxy 2
Expo Center, 1st Floor, Universal 8
Chair(s): Benjamin Vincent

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Optoelectroncis 3: Systems
Expo Center, 1st Floor, Universal 11
Chair(s): Gianlorenzo Masini

12:50-13:40

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Strain 2
Expo Center, 1st Floor, Universal 7
Chair(s): Atsushi Ogura and Seiichi Miyazaki

12:50-14:40

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


GeSn Session 3:  GeSn Devices and Characterization
Expo Center, 1st Floor, Universal 8
Chair(s): Benjamin Vincent and Y. C. Yeo

13:30-14:50

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Emerging Devices and Applications 2: Quantum Effects
Expo Center, 1st Floor, Universal 11
Chair(s): Joshua E. Goldberger and Roland Kenji Kawakami

14:55-17:25

P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6


Epitaxy 2: Si/SiGe Epitaxial Growth
Expo Center, 1st Floor, Universal 8
Chair(s): Yuji Yamamoto and A. Hikaviv