Doping and Junctions

Tuesday, 7 October 2014: 14:00-15:40
Expo Center, 1st Floor, Universal 17 (Moon Palace Resort)
Chairs:
Gudrun Helga Kissinger and Ruben R. Lieten
14:00
(Invited) Alternative High n-Type Doping Techniques in Germanium
G. Capellini (IHP-Innovations for High Performance Microelectronics, Dip. Scienze, UniversitÓ Roma Tre), W. M. Klesse, G. Mattoni, M. Y. Simmons, and G. Scappucci (School of Physics, University of New South Wales)
14:40
Deep-Level Defects in High-Dose Proton Implanted and High-Temperature Annealed Silicon
M. Jelinek (Infineon Technologies Austria AG), J. Laven (Infineon Technologies AG), M. Rommel (Fraunhofer Institute for Integrated Systems and Device Technology), W. Schustereder (Infineon Technologies Austria AG), H. J. Schulze (Infineon Technologies AG), L. Frey (Fraunhofer Institute for Integrated Systems and Device Technology), and R. Job (Department of Electrical Engineering and Computer Science, Muenster University of Applied Sciences)
15:00
Formation of Shallow n-p Junctions in Cz-Si by Low-Energy Implantation of Carbon Ions
B. Romanyuk, V. Melnik, V. Popov, V. Litovchenko, V. Babich, V. Ilchenko, V. Kladko (V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine), and J. Vanhellemont (Ghent University)
15:20
A New Method to Increase the Doping Efficiency of Proton Implantation in a High-Dose Regime
M. Jelinek (Infineon Technologies Austria AG), J. Laven (Infineon Technologies AG), R. Job (Department of Electrical Engineering and Computer Science, Muenster University of Applied Sciences), W. Schustereder (Infineon Technologies Austria AG), H. J. Schulze (Infineon Technologies AG), M. Rommel, and L. Frey (Fraunhofer Institute for Integrated Systems and Device Technology)