Doping and Junctions

Tuesday, 7 October 2014: 14:00-15:40
Expo Center, 1st Floor, Universal 17 (Moon Palace Resort)
Chairs:
Gudrun Helga Kissinger and Ruben R. Lieten
14:00
1651
(Invited) Alternative High n-Type Doping Techniques in Germanium
G. Capellini (IHP-Innovations for High Performance Microelectronics, Dip. Scienze, Università Roma Tre), W. M. Klesse, G. Mattoni, M. Y. Simmons, and G. Scappucci (School of Physics, University of New South Wales)
14:40
1652
Deep-Level Defects in High-Dose Proton Implanted and High-Temperature Annealed Silicon
M. Jelinek (Infineon Technologies Austria AG), J. Laven (Infineon Technologies AG), M. Rommel (Fraunhofer Institute for Integrated Systems and Device Technology), W. Schustereder (Infineon Technologies Austria AG), H. J. Schulze (Infineon Technologies AG), L. Frey (Fraunhofer Institute for Integrated Systems and Device Technology), and R. Job (Department of Electrical Engineering and Computer Science, Muenster University of Applied Sciences)
15:00
1653
Formation of Shallow n-p Junctions in Cz-Si by Low-Energy Implantation of Carbon Ions
B. Romanyuk, V. Melnik, V. Popov, V. Litovchenko, V. Babich, V. Ilchenko, V. Kladko (V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine), and J. Vanhellemont (Ghent University)
15:20
1654
A New Method to Increase the Doping Efficiency of Proton Implantation in a High-Dose Regime
M. Jelinek (Infineon Technologies Austria AG), J. Laven (Infineon Technologies AG), R. Job (Department of Electrical Engineering and Computer Science, Muenster University of Applied Sciences), W. Schustereder (Infineon Technologies Austria AG), H. J. Schulze (Infineon Technologies AG), M. Rommel, and L. Frey (Fraunhofer Institute for Integrated Systems and Device Technology)
See more of: P3: High Purity and High Mobility Semiconductors 13
See more of: Electronic Materials and Processing
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