Related Compounds 1

Wednesday, 8 October 2014: 08:00-09:40
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
Pouya Hashemi and M Bauer
Ge Condensation Using Rapid Thermal Oxidation for SGOI Substrate Preparation
O. Gourhant, C. Pribat, D. Barge (STMicroelectronics), V. Mazzocchi, F. Andrieu (CEA, LETI), F. Abbate, M. Juhel, C. Gaumer, E. Baylac, A. Pofelski, M. Bidaud, and G. Serventon (STMicroelectronics)
Effect of Graphene Passivation on Ge Pin Photodiode (Cancelled)
(Invited) Wrinkling Graphene with Bacteria and Functionalization of MoS2 for Electronic Applications
D. Briggs, S. Deng, and V. Berry (University of Illinois at Chicago)
(Invited) Thin Epitaxial Film of Ge and III-V Directly Bonded onto Si Substrate
T. Maeda (AIST), E. Mieda (National Institute of Advanced Industrial Science and Technology (AIST)), H. Ishii, T. Itatani, H. Hattori, T. Yasuda, A. Maeda (AIST), Y. Kurashima, H. Takagi (National Institute of Advanced Industrial Science and Technology (AIST)), T. Aoki, T. Yamamoto, O. Ichikawa, T. Osada (Sumitomo Chemical), T. Takada, M. Hata (Sumitomo Chemical Co., Ltd.), J. Yugami, A. Ogawa, T. Kikuchi, and Y. Kunii (Hitachi Kokusai Electric Inc.)