(Invited) Thin Epitaxial Film of Ge and III-V Directly Bonded onto Si Substrate

Wednesday, 8 October 2014: 09:10
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
T. Maeda (AIST), E. Mieda (National Institute of Advanced Industrial Science and Technology (AIST)), H. Ishii, T. Itatani, H. Hattori, T. Yasuda, A. Maeda (AIST), Y. Kurashima, H. Takagi (National Institute of Advanced Industrial Science and Technology (AIST)), T. Aoki, T. Yamamoto, O. Ichikawa, T. Osada (Sumitomo Chemical), T. Takada, M. Hata (Sumitomo Chemical Co., Ltd.), J. Yugami, A. Ogawa, T. Kikuchi, and Y. Kunii (Hitachi Kokusai Electric Inc.)
Ge and III-V compound semiconductors are expected to be used for non-Si channel MOSFETs as one of the effective technical booster to reduce the power consumption of next generation VLSI because of its higher carrier mobility than that of Si. Various approaches to introduce those non-Si channel materials into Si platform have been proposed, among which the ELO(epitaxial lift off) technique may have a good potential for manufacturing such a composite wafer consist of non-lattice-matched crystalline materials.

High quality Ge and GaAs/InGaAs epitaxial thin film can be grown on lattice-matched/quasi-lattice-matched GaAs or InP single crystal substrate using CVD/MOCVD technology. The thin epitaxial film can be chemically lifted-off by selectively removing sacrificial epitaxial layer grown between the epitaxial film and the substrate, transferred and directly bonded onto Si substrate using thin oxide film made of Al2O3 and/or SiO2 as an adhesive layer, thus successively providing GOI and/or III-VOI(Ge and/or III-V compound semiconductors on insulator) composite wafer including the oxide film as an effective BOX(buried oxide) layer.  The area size of transferred Ge/III-V film can be modified according to its application die size.  The epitaxial layer quality after transferred onto Si substrate and initial device performance of Ge/III-V channel MOSFET formed on the Ge/III-V OI substrate will be introduced.