(Invited) Thin Epitaxial Film of Ge and III-V Directly Bonded onto Si Substrate
High quality Ge and GaAs/InGaAs epitaxial thin film can be grown on lattice-matched/quasi-lattice-matched GaAs or InP single crystal substrate using CVD/MOCVD technology. The thin epitaxial film can be chemically lifted-off by selectively removing sacrificial epitaxial layer grown between the epitaxial film and the substrate, transferred and directly bonded onto Si substrate using thin oxide film made of Al2O3 and/or SiO2 as an adhesive layer, thus successively providing GOI and/or III-VOI(Ge and/or III-V compound semiconductors on insulator) composite wafer including the oxide film as an effective BOX(buried oxide) layer. The area size of transferred Ge/III-V film can be modified according to its application die size. The epitaxial layer quality after transferred onto Si substrate and initial device performance of Ge/III-V channel MOSFET formed on the Ge/III-V OI substrate will be introduced.