P7 SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
P7 SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
Sponsor(s):
Electronics and Photonics
Lead Organizer: D. L. Harame (IBM Microelectronics Division)
Co-organizers: J. Boquet (IMB Corp.) and Junichi Murota (Tohoku University)
Monday, 6 October 2014
10:15-12:25
13:40-15:00
13:40-15:40
15:55-18:15
Tuesday, 7 October 2014
08:00-10:00
10:15-11:45
10:15-11:55
13:20-15:30
15:45-17:25
18:00-20:00
Wednesday, 8 October 2014
08:00-09:40
10:25-12:05
Joint FET and Strain 2: Tunnel FETs and Strained Bulk and SOI "Finned" FETs
Expo Center, 1st Floor, Universal 8
13:20-14:40
Emerging Devices and Applications 1: Quantum Effects/Spintronics
Expo Center, 1st Floor, Universal 8