Surfaces & Interfaces 1: Characterization and Process Control

Monday, 6 October 2014: 13:40-15:40
Expo Center, 1st Floor, Universal 7 (Moon Palace Resort)
Chairs:
Seiichi Miyazaki and Shigeaki Zaima
13:40
1765
(Invited) Anisotropoic Strain Evaluation in the Finite Si Area by Surface Plasmon Enhanced Raman Spectroscopy
A. Ogura and D. Kosemura (Meiji University)
14:10
1766
Detection of Ge and Si Intermixing in Ge/Si Using Multiwavelength Micro-Raman Spectroscopy
W. S. Yoo, K. Kang, T. Ueda, T. Ishigaki (WaferMasters, Inc.), H. Nishigaki, N. Hasuike, H. Harima, M. Yoshimoto (Kyoto Institute of Technology), and C. S. Tan (Nanyang Technological University)
14:30
1767
(Invited) Si Ultrathin Films on Silver Surfaces: An Intriguing Epitaxial System
T. Leoni (Aix Marseille Université), R. Bernard (Institut des Nanosciences de Paris), A. Ranguis (Aix Marseille Université), Y. Borensztein, G. Prévot (Institut des Nanosciences de Paris), and L. Masson (Aix Marseille Université)
15:00
1768
Surface Reaction in Thin Film Formation of Si1－xGex Alloys on Si(100) by Electron-Cyclotron-Resonance Ar Plasma Chemical Vapor Deposition without Substrate Heating
N. Ueno, M. Sakuraba, and S. Sato (Tohoku University)
15:20
1769
Ni(SiGeSn) Metal Contact Formation on Low Bandgap Strained (Si)Ge(Sn) Semiconductors
S. Wirths (Forschungszentrum Juelich), R. Troitsch (Peter Grünberg Institute 9 and JARA-FIT), G. Mussler (Forschungszentrum Juelich), P. Zaumseil (IHP), J. M. Hartmann (Université Grenoble Alpes), T. Schroeder (IHP), S. Mantl, and D. Buca (Forschungszentrum Juelich)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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