HBT I: Advanced SiGe HBT Technology

Monday, 6 October 2014: 13:40-15:00
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
Chairs:
G. Niu and M. Ostling
13:40
1762
(Invited) Towards 0.7 Terahertz Silicon Germanium Heterojunction Bipolar Technology – The DOTSEVEN Project
R. Lachner (Infineon Technologies AG)
14:10
1763
(Invited) Reliability of SiGe HBTs in Long-Term Operation
G. G. Fischer (IHP)
14:40
1764
A Novel Approach to Isolating the Edge of the Shallow Trench Isolation in SiGe HBTs for Improved Device Performance
R. A. Camillo-Castillo, Q. Z. Liu, V. Jain, J. W. Adkisson (IBM Microelectronics Division), M. H. Khater (IBM T.J. Watson Research Center), P. Gray, J. J. Pekarik, R. Malladi, and D. L. Harame (IBM Microelectronics Division)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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