HBT I: Advanced SiGe HBT Technology

Monday, 6 October 2014: 13:40-15:00
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
G. Niu and M. Ostling
A Novel Approach to Isolating the Edge of the Shallow Trench Isolation in SiGe HBTs for Improved Device Performance
R. A. Camillo-Castillo, Q. Z. Liu, V. Jain, J. W. Adkisson (IBM Microelectronics Division), M. H. Khater (IBM T.J. Watson Research Center), P. Gray, J. J. Pekarik, R. Malladi, and D. L. Harame (IBM Microelectronics Division)