Epitaxy 1: Low-dimensional Epitaxial Systems

Wednesday, 8 October 2014: 14:55-16:45
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
Chairs:
Alois Lugstein and C Merckling
 
Structural and Electronic Properties of In-Situ Phosphorous-Doped Ge Layers Grown by Reduced Pressure – Chemical Vapour Deposition (Cancelled)
14:55
1822
(Invited) Three-Dimensional Epitaxial Si1-XGex, Ge and SiC Crystals on Deeply Patterned Si Substrates
H. von Känel (ETH Zürich), F. Isa (ETH Zürich, Politecnico di Milano), C. V. Falub, E. J. Barthazy, E. Müller Gubler (ETH Zürich), D. Chrastina, G. Isella (Politecnico di Milano), T. Kreiliger, A. G. Taboada (ETH Zürich), M. Meduna (Masaryk University), R. Kaufmann, A. Neels, A. Dommann (EMPA), P. Niedermann (CSEM Neuchâtel), F. Mancarella (CNR-IMM Bologna), M. Mauceri, M. Puglisi (Epitaxial Technology Center Catania), D. Crippa (LPE Milano), F. La Via, R. Anzalone, N. Piluso (IMM-CNR Catania), R. Bergamaschini, A. Marzegalli, and L. Miglio (Università di Milano Bicocca)
15:25
1823
Lateral Gemanium Growth for Local GeOI Fabrication
Y. Yamamoto, M. A. Schubert, C. Reich (IHP), and B. Tillack (IHP, Technische Universität Berlin)
15:45
1824
Morphological Instability of High Ge Percent SiGe Films Grown by Ultra-High Vacuum Chemical Vapor Deposition
J. Hart, R. Hazbun (University of Delaware), J. Nakos, D. Siegel, C. Funch (IBM Microelectronics Division), J. Kolodzey (University of Delaware), and D. L. Harame (IBM Microelectronics Division)
16:05
1825
Use of a Purged FOUP to Improve H-Terminated Silicon Surface Stability Prior to Epitaxial Growth
K. Wostyn (IMEC), D. Rondas, K. Kenis, R. Loo (imec vzw), A. Y. Hikavyy (IMEC), B. Douhard, P. W. Mertens, F. Holsteyns (imec vzw), S. De Gendt (imec vzw, University of Leuven), L. D'Urzo, and L. Van Autryve (Entegris)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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