Surfaces & Interfaces 2: Channel and Gate Stack Technology 2014

Tuesday, 7 October 2014: 10:15-11:45
Expo Center, 1st Floor, Universal 7 (Moon Palace Resort)
Chairs:
Seiichi Miyazaki and Shigeaki Zaima
10:15
1785
Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack
A. Ohta (Nagoya University), H. Murakami, K. Hashimoto (Hiroshima University), K. Makihara, and S. Miyazaki (Nagoya University)
10:35
1786
Interfacial Layer Engineering Using Thulium Silicate/Germanate for High-k/Metal Gate MOSFETs
P. E. Hellström, E. D. Litta, and M. Östling (KTH Royal Institute of Technology)
11:05
1787
Investigation of Al-PMA Effect on Al2O3/GeOX/Ge Gate Stack
Y. Nagatomi, Y. Nagaoka, K. Yamamoto, D. Wang, and H. Nakashima (Kyushu University)
11:25
1788
Ultra-Thin, High Quality HfO2 on Strained-Ge MOS Capacitors with Low Leakage Current
J. T. Teherani, W. Chern, D. A. Antoniadis, and J. L. Hoyt (Massachusetts Institute of Technology)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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