HBT 2: Optimization, Characterization, and Modeling

Tuesday, 7 October 2014: 10:15-11:55
Expo Center, 1st Floor, Universal 8 (Moon Palace Resort)
Chairs:
G. Niu and Rudolf Lachner
10:15
1781
(Invited) Application-Specific SiGe HBT Optimization
P. H. C. Magnée, R. V. Dalen, H. Mertens, and T. Vanhoucke (NXP Semiconductors)
10:45
1782
SiGe HBTs in 90nm BiCMOS Technology Demonstrating fT/fMAX 285GHz/475GHz through Simultaneous Reduction of Base Resistance and Extrinsic Collector Capacitance
Q. Z. Liu, J. W. Adkisson, V. Jain, R. A. Camillo-Castillo (IBM Microelectronics Division), M. H. Khater (IBM T.J. Watson Research Center), P. B. Gray, J. J. Pekarik, B. Zetterlund, A. W. Divergilio, M. L. Kerbaugh, and D. L. Harame (IBM Microelectronics Division)
11:05
1783
(Invited) Electro-Thermal Characterization of SiGe HBT PA-Cells
T. Zimmer (University of Bordeaux), M. Weiß (XMOD Technologies), M. De Matos, C. Maneux (University of Bordeaux), and S. Fregonese (CNRS)
11:35
1784
Second Order Intermodulation Linearity of a 200 GHz SiGe HBT Technology
Z. Li, G. Niu (Auburn University), and X. Wei (Huazhong University of Science and Technology)
See more of: P7: SiGe, Ge, and Related Compounds: Materials, Processing, and Devices 6
See more of: Electronic Materials and Processing
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