GaN Materials and Power Devices

Tuesday, 7 October 2014: 10:10-11:50
Expo Center, 1st Floor, Universal 20 (Moon Palace Resort)
Chairs:
Manijeh Razeghi and Aris Christou
10:10
1976
Digital Control of DC-DC Converters Employing Wide Band Gap (WBG) Power Devices
L. Guo (Northern Illinois University), A. Pozo Arribas, M. Krishnamurthy (Illinois Institute of Technology), K. Shenai, and J. Wang (Argonne National Laboratory)
10:30
1977
New Material Technologies in AlGaN/GaN Based Electronic Devices
M. Leszczynski (Institute of High Pressure Physics)
10:50
1978
Novel Oxide Buffer for Scalable GaN-on-Silicon
A. Clark, R. Dargis, F. E. Arkun, and R. S. Smith (Translucent Inc.)
11:10
1979
An Industrial 650V GaN DHEMT Cascode Technology
M. Tack, P. Moens, C. Liu, and F. Bauwens (ON Semiconductor)
11:30
1980
Advances in Diamond Integration for Thermal Management in GaN Power HEMTs
T. J. Anderson, K. D. Hobart, M. J. Tadjer, A. D. Koehler, T. I. Feygelson, B. B. Pate (Naval Research Laboratory), J. K. Hite (U.S. Naval Research Laboratory), F. J. Kub, and C. R. Eddy Jr. (Naval Research Laboratory)
See more of: Q3: GaN and SiC Power Technologies 4
See more of: Electronic and Photonic Devices and Systems
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